收藏本站
NTZD3155C
Small Signal MOSFET
Complementary 20 V, 540 mA / ? 430 mA,
with ESD protection, SOT ? 563 package.
Features
? Leading Trench Technology for Low R DS(on) Performance
? High Efficiency System Performance
? Low Threshold Voltage
? ESD Protected Gate
? Small Footprint 1.6 x 1.6 mm
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? DC ? DC Conversion Circuits
? Load/Power Switching with Level Shift
? Single or Dual Cell Li ? Ion Battery Operated Systems
? High Speed Circuits
? Cell Phones, MP3s, Digital Cameras, and PDAs
V (BR)DSS
N ? Channel
20 V
P ? Channel
? 20 V
S 1
http://onsemi.com
R DS(on) Typ
0.4 W @ 4.5 V
0.5 W @ 2.5 V
0.7 W @ 1.8 V
0.5 W @ ? 4.5 V
0.6 W @ ? 2.5 V
1.0 W @ ? 1.8 V
PINOUT: SOT ? 563
1 6
I D Max
(Note 1)
540 mA
? 430 mA
D 1
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Value
Unit
G 1
2
5
G 2
Drain ? to ? Source Voltage
V DSS
20
V
D 2
3
4
S 2
Gate ? to ? Source Voltage
V GS
± 6
V
N ? Channel Continu-
ous Drain Current
(Note 1)
P ? Channel Continu-
ous Drain Current
(Note 1)
Steady
State
t v 5s
Steady
State
t v 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
540
390
570
? 430
? 310
? 455
mA
6
1
SOT ? 563 ? 6
CASE 463A
Top View
MARKING
DIAGRAM
TW M G
G
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
t v 5s
N ? Channel
P ? Channel
T A = 25 ° C
t p = 10 m s
P D
I DM
250
280
1500
? 750
mW
mA
TW = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J ,
T STG
I S
? 55 to
150
350
° C
mA
Device
NTZD3155CT1G
NTZD3155CT1H
Package
SOT ? 563
(Pb ? Free)
Shipping ?
4000 / Tape & Reel
T L
4000 / Tape & Reel
NTZD3155CT2H
8000 / Tape & Reel
NTZD3155CT5H
Lead Temperature for Soldering Purposes 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
NTZD3155CT2G SOT ? 563
(Pb ? Free)
NTZD3155CT5G SOT ? 563
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 3
1
Publication Order Number:
NTZD3155C/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTZD3156CT5G MOSFET N/P-CH 20V SOT-563
NTZD5110NT5G MOSFET N-CH DUAL 60V SOT563
NTZS3151PT5G MOSFET P-CH 20V 860MA SOT-563
NV06P00472J-- THERMISTOR NTC DISK 4.7KOHM 5%
NVB25P06T4G MOSFET P-CH 60V 27.5A D2PAK
NVB6410ANT4G MSOFET N-CH 100V 76A D2PAK
NVD4815NT4G MOSFET N-CH 30V 6.9A DPAK-4
NVD5117PLT4G MOSFET P-CH 60V 61A DPAK
相关代理商/技术参数
NTZD3155CT5G 功能描述:MOSFET 20V 540mA/-430mA Complementary w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTZD3156C 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET
NTZD3156CT1G 功能描述:MOSFET 20/6V Comp w/100K G-S Resistors RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTZD3156CT2G 功能描述:MOSFET COMP SOT563 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTZD3156CT5G 功能描述:MOSFET COMP SOT563 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTZD3158PT1G 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA TR - Tape and Reel
NTZD5110N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563
NTZD5110NT1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563